2sd1468s 1a , 30v npn plastic-encapsulated transistor elektronische bauelemente 26-mar-2012 rev. a page 1 of 1 http://www.secosgmbh.com/ any changes of specification will not be informed i ndividually. 3 base 1 emitter collector 2 rohs compliant product a suffix of -c specifies halogen & lead-free features low saturation voltage ideal for voltage, high current drives. high dc current gain and high current classification of h fe product-rank 2SD1468S-Q 2sd1468s-r 2sd1468s-s range 120~270 180~390 270~560 absolute maximum ratings (t a =25c unless otherwise specified) parameter symbol rating unit collector to base voltage v cbo 30 v collector to emitter voltage v ceo 15 v emitter to base voltage v ebo 5 v collector current - continuous i c 1 a collector power dissipation p c 300 mw junction, storage temperature t j , t stg 150, -55~150 c electrical characteristics (t a =25c unless otherwise specified) parameter symbol min. typ. max. unit test condition collector to base breakdown voltage v (br)cbo 30 - - v i c =50 a, i e =0 collector to emitter breakdown voltage v (br)ceo 15 - - v i c =1ma, i b =0 emitter to base breakdown voltage v (br)ebo 5 - - v i e =50 a, i c =0 collector cutCoff current i cbo - - 0.5 a v cb =20v, i e =0 emitter cutCoff current i ebo - - 0.5 a v eb =4v, i c =0 dc current gain h fe 120 - 560 v ce =3v, i c =100ma collector to emitter saturation voltage v ce(sat) - - 0.4 v i c =500ma, i b =50ma collector output capacitance c ob - - 30 pf v cb =10v, i e =0, f=1mhz transition frequency f t 50 - - mhz v ce =5v, i c =50ma, f=100mhz to-92s ref. millimeter min. max. a 3.90 4.10 b 3.05 3.25 c 1.42 1.62 d 15.1 15.5 e 2.97 3.27 f 0.66 0.86 g 2.44 2.64 h 1.27 ref. j 0.36 0.48 k 0.36 0.51 l 45
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